Elektronische Bauelemente
2SC5585
0.5A , 15V
NPN Silicon General Purpose Transistor
24-Feb-2011 Rev. B P
age 1 of 2
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
1
Base
2
Emitter
C
ollector
3
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
High Current.
Low V
CE(sat)
. V
CE(sat)
≦0.25V (@I
C
=200mA / I
B
=10mA)
Complement of 2SC4738.
Application
General Purpose Amplification.
M
ARKING
PACKAGE INFORMATION
Package MPQ LeaderSize
SOT-523 3K 7’ inch
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C unless otherwise specified)
Parameter S
ymbol Ratings Unit
Collector to Base Voltage V
CBO
15 V
Collector to Emitter Voltage V
CEO
12 V
Emitter to Base Voltage V
EBO
6 V
Collector Currrent I
C
500
mA
Collector Power Dissipation P
C
150 mW
Junction & Storage Temperature T
J
, T
STG
150, -55 ~ 150 ℃
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise specified)
Parameter Symbol Min. Typ. Max. Unit Test Conditions
Collector-base breakdown voltage V
(BR)CBO
15 - - V I
C
=10μA, I
E
=0
Collector-emitter breakdown voltage V
(BR)CEO
12 - - V I
C
=1mA, I
B
=0
Emitter-base breakdown voltage V
(BR)EBO
6 - - V I
E
=10μA, I
C
=0
Collector cut-off current I
CBO
- - 0.1 μA V
CB
=15V, I
E
=0
Emitter cut-off current I
EBO
- - 0.1 μA V
EB
=6V, I
C
=0
DC current gain h
FE
270 - 680 V
CE
=2V, I
C
=10mA
Collector-emitter saturation voltage * V
CE(sat)
- - 0.25 V I
C
=200mA, I
B
=10mA
Transition frequency f
T
- 320 - MHz V
CE
=2V, I
C
=10mA, f=100MHz
Collector output capacitance C
ob
- 7.5 - pF V
CB
=10V, I
E
=0, f=1MHz
SOT-523
Top View
A
L
M
C B
D
G
H J
F
K
E
1
2
3
1
2
3
Millimeter Millimeter
REF.
Min. Max.
REF.
Min. Max.
A 1.5 1.7 G - 0.1
B 1.45 1.75 H 0.55 REF.
C 0.75 0.85 J 0.1 0.2
D 0.7 0.9 K -
E 0.9 1.1 L 0.5 TYP.
F 0.15 0.25 M 0.25 0.325
BX