R09DS0056EJ0300 Rev.3.00 Page 1 of 8
Mar 5, 2013
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Preliminary Data Sheet
2SC5509
NPN SILICON RF TRANSISTOR
FOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)
FEATURES
• Ideal for medium output power amplification
• NF = 1.2 dB TYP., G
a
= 12 dB TYP. @ V
CE
= 2 V, I
C
= 10 mA, f = 2 GHz
• Maximum available power gain: MAG = 14 dB TYP. @ V
CE
= 2 V, I
C
= 50 mA, f = 2 GHz
• f
T
= 25 GHz technology adopted
• Flat-lead 4-pin thin-type super minimold (M04) package
ORDERING INFORMATION
Part Number Order Number Quantity Package Supplying Form
2SC5509 2SC5509-A 50 pcs (Non reel)
2SC5509-T2 2SC5509-T2-A 3 kpcs/reel
Flat-lead 4-pin
thin-type super
minimold (M04)
(Pb-Free)
• 8 mm wide embossed taping
• Pin 1 (Emitter), Pin 2 (Collector) face
the perforation side of the tape
Remark To order evaluation samples, please contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T
C
= 25°C)
Parameter Symbol Ratings Unit
Collector to Base Voltage V
CBO
15 V
Collector to Emitter Voltage V
CEO
3.3 V
Emitter to Base Voltage V
EBO
1.5 V
Collector Current I
C
100 mA
Total Power Dissipation P
tot
Note
190 mW
Junction Temperature T
j
150 °C
Storage Temperature T
stg
−65 to +150 °C
Note Free air.
THERMAL RESISTANCE
Parameter Symbol Ratings Unit
Junction to Case Resistance R
th j-c
95 °C /W
Junction to Ambient Resistance R
th j-a
650 °C /W
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0056EJ0300
Rev.3.00
Mar 5, 2013
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