R09DS0055EJ0200 Rev.2.00 Page 1 of 8
Mar 5, 2013
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Preliminary Data Sheet
2SC5508
NPN SILICON RF TRANSISTOR
FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)
FEATURES
• Ideal for low-noise, high-gain amplification applications
• NF = 1.1 dB TYP., G
a
= 16 dB TYP. @ V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz
• Maximum available power gain: MAG = 19 dB TYP. @ V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
• f
T
= 25 GHz technology adopted
• Flat-lead 4-pin thin-type super minimold (M04) package
ORDERING INFORMATION
Part Number Order Number Quantity Package Supplying Form
2SC5508 2SC5508-A 50 pcs (Non reel)
2SC5508-T2 2SC5508-T2-A 3 kpcs/reel
2SC5508-T2B 2SC5508-T2B-A 15 kpcs/reel
Flat-lead 4-pin
thin-type super
minimold (M04)
(Pb-Free)
• 8 mm wide embossed taping
• Pin 1 (Emitter), Pin 2 (Collector) face
the perforation side of the tape
Remark To order evaluation samples, please contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T
C
= 25°C)
Parameter Symbol Ratings Unit
Collector to Base Voltage V
CBO
15 V
Collector to Emitter Voltage V
CEO
3.3 V
Emitter to Base Voltage V
EBO
1.5 V
Collector Current I
C
35 mA
Total Power Dissipation P
tot
Note
115 mW
Junction Temperature T
j
150 °C
Storage Temperature T
stg
−65 to +150 °C
Note Free air.
THERMAL RESISTANCE
Parameter Symbol Ratings Unit
Junction to Case Resistance R
th j-c
150 °C /W
Junction to Ambient Resistance R
th j-a
650 °C /W
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0055EJ0200
Rev.2.00
Mar 5, 2013
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