Elektronische Bauelemente
2SC5343
NPN Transistor
Plastic-Encapsulate Transistors
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
4.55±0.2
3.5
±0.2
4.5±0.2
14.3
±0.2
2.54
±0.1
(1.27 Typ.)
0.
46
+0.1
–0.1
0.43
+0.08
–0.07
132
1: Emitter
2: Collector
3: Base
1.25
–0.2
+0.2
FEATURES
* Excellent hFE Linearity
: hFE(2)=100(Typ) at VCE=6V,IC=150mA
: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ)
* Low Noise: NF=1Db(Typ). At f=1KHz
ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified
Parameter Symbol Min
Typ.
Max
Uni
Test Conditions
Collector-Base Breakdown Voltage
B(BR)CBO - - V
IC=100µA,IE=0
IC=10mA,IB=0
IE=10µA,IC=0
VCB=60V,IE=0
VEB=
IC=
VCE= V, IC=
VCE= V, IC=1mA
VCB= 10 , f=1MHz,IE=0
50
- - V
- - V
ICBO -
-
0.1 uA
IEBO
-
-
uA
VCE(sat)
-
hFE1 700
fT
-
MH
Cob
-
3.5
pF
z
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector Saturation Voltage
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
t
60
5
70
0.1
0.1
0.25
V
5V,IC=0
100m A,IB=10mA
6
2 mA
10
V
C
-
8
0
o
-
-
B(BR)CEO
B(BR)EBO
Noise Figure
NF
10
-
-
VCE= V, IC=
6
0.1mA,f=1KHz,Rg=10K
dB
MAXIMUM RATINGS
Symbol Parameter Value
Collector Current
5
0.2
55~+150
50
60
150
-
IC
Tstg
TJ,
Junction and
Total Power Dissipation
V
EBO
PD
Emitter-Base Voltage
V
mA
W
Storage Temperature
C
O
V
CEO
Collector-Emitter Voltage
V
V
CBO
Collector-Base Voltage
V
Units
ABSOLUTE
Ta=25
C unless otherwise noted
o
Base Current-Continuous
50
IB
mA
TO-92
01-Jun-2002 Rev. A
Page 1 of 2
CLASSIFICATION OF h
FE(1)
Rank
O Y G L
Range
70-140 120-240 200-400 300-700
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
