R09DS0047EJ0300 Rev.3.00 Page 1 of 5
Sep 14, 2012
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Preliminary Data Sheet
2SC5337
NPN Silicon RF Transistor for High-Frequency
Low Distortion Amplifier 4-Pin Power Minimold
FEATURES
• Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA
• Low noise
NF = 1.5 dB TYP. @ V
CE = 10 V, IC = 50 mA, f = 500 MHz
NF = 2.0 dB TYP. @ V
CE = 10 V, IC = 50 mA, f = 1 GHz
• 4-pin power minimold package with improved gain from the 2SC4536
ORDERING INFORMATION
Part Number Order Number Package Quantity Supplying Form
2SC5337 2SC5337-AZ 25 pcs (Non reel) • Magazine case
2SC5337-T1 2SC5337-T1-AZ
4-pin power
minimold
(Pb-Free)
Note
1 kpcs/reel • 12 mm wide embossed taping
• Collector face the perforation side of the tape
Note Contains Lead in the part except the electrode terminals.
Remark To order evaluation samples, please contact your nearby sales office.
Unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter Symbol Ratings Unit
Collector to Base Voltage VCBO 30 V
Collector to Emitter Voltage VCEO 15 V
Emitter to Base Voltage VEBO 3.0 V
Collector Current IC 250 mA
Total Power Dissipation Ptot
Note
2.0 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg −65 to +150 °C
Note Mounted on 16 cm
2
× 0.7 mm (t) ceramic substrate (Copper plating)
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0047EJ0300
Rev.3.00
Sep 14, 2012
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