©
1995
DATA SHEET
SILICON TRANSISTOR
The 2SC5288 is ideal for the driver stage amplifier in 1.9GHz-band digital
cordless phones (DECT, PHS, etc.).
FEATURES
•P–1 = 24 dBm TYP.
@f = 1.9 GHz, VCC = 3.6 V, ICq = 1 mA (Class AB), Duty = 1/8
• 4-Pin Mini Mold Package
EIAJ: SC-61
ORDERING INFORMATION
Part Number
Quantity Packing Style
2SC5288-T1 3 Kpcs/Reel Embossed tape 8 mm wide.
Pin 3 (Base), Pin 4 (Emitter) face
to perforation side of the tape.
Remark If you require an evaluation sample, please contact an NEC Sales
Representative. (Unit sample quantity is 50 pcs.)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Parameter Symbol Rating Unit
Collector to Base Voltage VCBO 9.0 V
Collector to Emitter Voltage VCEO 6.0 V
Emitter to Base Voltage VEBO 2.0 V
Collector Current IC 150 mA
Total Power Dissipation PT 200 (CW) mW
1.0 (duty = 1/8)
Note
W
2.5 (duty = 1/24)
Note
W
Junction Temperature Tj 150 ˚C
Storage Temperature Tstg –65 to +150 ˚C
Note Pulse period is 10 msec or less.
2SC5288
NPN SILICON EPITAXIAL TRANSISTOR
FOR L-BAND LOW-POWER AMPLIFIER
PACKAGE DRAWING
(Unit: mm)
(1.9)
(1.8)
0.85 0.95
0.4
+0.1
–0.05
2.8
+0.2
–0.3
1.5
+0.2
–0.1
2
3
1
4
2.9±0.2
0.4
+0.1
–0.05
0.4
+0.1
–0.05
T-89
0.6
+0.1
–0.05
1.1
+0.2
–0.1
0.8
0.16
+0.1
–0.06
0 to 0.1
5°
5°
5°
5°
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
Document No. P10249EJ2V0DS00 (2nd edition)
Date Published December 1995 P
Printed in Japan
