©
1994
DATA SHEET
SILICON TRANSISTOR
FEATURES PACKAGE DRAWINGS
• Low Voltage Operation, Low Phase Distortion (Unit: mm)
• Low Noise
NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz
NF = 1.7 dB TYP. @V
CE = 1 V, IC = 3 mA, f = 2 GHz
• Large Absolute Maximum Collector Current
IC = 100 mA
• 4-Pin Compact Mini Mold Package
ORDERING INFORMATION
PART NUMBER
QUANTITY PACKING STYLE
2SC5194-T1 3 Kpcs/Reel Embossed tape 8 mm wide.
Pin 3 (Base), Pin 4 (Emitter) face to perforation
side of the tape.
2SC5194-T2 3 Kpcs/Reel Embossed tape 8 mm wide.
Pin 1 (Collector), Pin 2 (Emitter) face to
perforation side of the tape.
Remark If you require an evaluation sample, please contact an NEC
Sales Representative. (Unit sample quantity is 50 pcs.)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
PARAMETER SYMBOL RATING UNIT
Collector to Base Voltage VCBO 9V
Collector to Emitter Voltage VCEO 6V
Emitter to Base Voltage VEBO 2V
Collector Current IC 100 mA
Total Power Dissipation PT 150 mW
Junction Temperature Tj 150 ˚C
Storage Temperature Tstg –65 to +150 ˚C
2SC5194
This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
2.1±0.2
1.25±0.1
2.0±0.2
0.65
3
T88
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
0.60
(1.25)
0.3
–0.05
+0.1
1
2
+0.1
0.3
–0.05
+0.1
0.15
–0.05
+0.1
0.3
0.9±0.1
0 to 0.1
(1.3)
0.3
–0.05
4
0.4
–0.05
+0.1
Document No. P10397EJ2V0DS00 (2nd edition)
(Previous No. TD-2487)
Date Published August 1995 P
Printed in Japan
