DATA SHEET
SILICON TRANSISTOR
2SC5193
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
COMPACT MINI MOLD
DATA SHEET
Document No. P10396EJ2V1DS00 (1st edition)
Date Published March 1997 N
Printed in Japan
1994©
FEATURES
• Low Voltage Operation, Low Phase Distortion
• Low Noise
NF = 1.5 dB TYP. @ V
CE
= 3 V, I
C
= 7 mA, f = 2 GHz
NF = 1.7 dB TYP. @ V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
• Large Absolute Maximum Collector Current
I
C
= 100 mA
• Compact Mini Mold Package
EIAJ: SC-70
ORDERING INFORMATION
PART
NUMBER
QUANTITY PACKING STYLE
2SC5193-T1 3 Kpcs/Reel Embossed tape 8 mm wide.
Pin 3 (collector) face to perforation side of the tape.
2SC5193-T2 3 Kpcs/Reel Embossed tape 8 mm wide.
Pin 1 (Emitter), Pin 2 (Base) face to perforation side
of the tape.
Remark
If you require an evaluation sample, please contact an NEC
Sales Representative. (Unit sample quantity is 50 pcs.)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C)
PARAMETER SYMBOL RATING UNIT
Collector to Base Voltage V
CBO
9V
Collector to Emitter Voltage V
CEO
6V
Emitter to Base Voltage V
EBO
2V
Collector Current I
C
100 mA
Total Power Dissipation P
T
150 mW
Junction Temperature T
j
150 C
Storage Temperature T
stg
65 to +150 C
This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.
PACKAGE DRAWING
(Units: mm)
1.25±0.1
2
1
3
Marking
PIN CONNECTIONS
1.
2.
3.
Emitter
Base
Collector
2.1±0.1
2.0±0.20.9±0.1
0 to 0.1
0.65
0.3
0.65
0.3
+0.1
−0
0.3
+0.1
−0
0.15
+0.1
−0.05
T88
