SILICON TRANSISTOR
2SC5191
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
DATA SHEET
Document No. P10395EJ2V1DS00 (2nd edition)
Date Published March 1997 N
Printed in Japan
1994©
FEATURES
•Low Voltage Operation, Low Phase Distortion
•Low Noise
NF = 1.5 dB TYP. @ V
CE
= 3 V, I
C
= 7 mA, f = 2 GHz
NF = 1.7 dB TYP. @ V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
•Large Absolute Maximum Collector Current
I
C
= 100 mA
•Mini Mold Package
EIAJ: SC-59
ORDERING INFORMATION
PART
NUMBER
QUANTITY PACKING STYLE
2SC5191-T1 3 Kpcs/Reel Embossed tape 8 mm wide.
Pin 3 (collector) face to perforation side of the tape.
2SC5191-T2 3 Kpcs/Reel Embossed tape 8 mm wide.
Pin 1 (Emitter), Pin 2 (Base) face to perforation side
of the tape.
Remark
If you require an evaluation sample, please contact an NEC
Sales Representative. (Unit sample quantity is 50 pcs.)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C)
PARAMETER SYMBOL RATING UNIT
Collector to Base Voltage V
CBO
9V
Collector to Emitter Voltage V
CEO
6V
Emitter to Base Voltage V
EBO
2V
Collector Current I
C
100 mA
Total Power Dissipation P
T
200 mW
Junction Temperature T
j
150
°
C
Storage Temperature T
stg
−
65 to +150
°
C
This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.
PIN CONNECTIONS
1.
2.
3.
Emitter
Base
Collector
PACKAGE DRAWINGS
(Unit: mm)
2.8±0.2
2.9±0.2
0.651.5
3
1
Marking
2
+0.1
−0.15
0.4
0.95
+0.1
−0.05
0.16
0 to 0.1
0.3
1.1 to
1.4
+0.1
−0.06
0.4
+0.1
−0.05
T88
0.95
