PLEASE NOTE:PLEASE NOTE:
PLEASE NOTE:PLEASE NOTE:
PLEASE NOTE:
The following part numbersThe following part numbers
The following part numbersThe following part numbers
The following part numbers
from this datasheet are notfrom this datasheet are not
from this datasheet are notfrom this datasheet are not
from this datasheet are not
recommended for new design.recommended for new design.
recommended for new design.recommended for new design.
recommended for new design.
Please call sales office forPlease call sales office for
Please call sales office forPlease call sales office for
Please call sales office for
details:details:
details:details:
details:
NE68730NE68730
NE68730NE68730
NE68730
NE68733NE68733
NE68733NE68733
NE68733
NE68739NE68739
NE68739NE68739
NE68739
NE68739RNE68739R
NE68739RNE68739R
NE68739R
PART NUMBER
1
NE68718 NE68719 NE68730 NE68733 NE68739/39R
EIAJ
2
REGISTERED NUMBER 2SC5185 2SC5186 2SC5184 2SC5182 2SC5183/83R
PACKAGE OUTLINE 1 8 1 9 3 0 3 3 39/39R
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP M A X
fT Gain Bandwidth Product at
VCE = 2 V, I C = 20 mA, f = 2.0 GHz GHz 1 0 1 3 9 1 1 9 1 1 9 1 2 7. 5 1 0
fT Gain Bandwidth Product at
VCE = 1 V, I C = 10 mA, f = 2.0 GHz GHz 8 11 7 9 7 9 7 1 0 7 8. 5
NFMIN Minimum Noise Figure at
VCE = 2 V, IC = 3 mA, f = 2.0 GHz dB 1. 3 2. 0 1. 3 2. 0 1. 3 2. 0 1. 3 2. 0 1. 3 2. 0
NFMIN Minimum Noise Figure at
VCE = 1 V, IC = 3 mA, f = 2.0 GHz dB 1. 3 2. 0 1. 3 2. 0 1. 3 2. 0 1. 3 2. 0 1. 3 2. 0
|S21e|
2
Insertion Power Gain at
VCE = 2V, IC =20 mA, f = 2.0 GHz d B 8 11 8. 5 1 0 7 8. 5 7 8. 5 7. 5 10
|S21e|
2
Insertion Power Gain at
VCE = 1V, IC =10 mA, f = 2.0 GHz d B 7 .5 9 6 7.5 6 7 . 5 6 7. 5 7 8. 5
hFE Forward Current Gain
3
at
VCE = 2 V, IC = 20 mA 70 140 70 140 70 140 70 140 70 140
ICBO Collector Cutoff Current
at VCB = 5 V, IE = 0 mA nA 100 100 100 100 100
IEBO Emitter Cutoff Current
at VEB = 1 V, IC = 0 mA nA 100 100 100 100 100
CRE
4
Feedback Capacitance at
VCB = 2 V, IE = 0 mA, f = 1 MHz pF 0.3 0. 6 0. 4 0. 8 0. 4 0. 8 0. 4 0. 8 0 . 4 0. 8
PT Total Power Dissipation mW 90 90 90 90 90
RTH(J-A) Thermal Resistance
(Junction to Ambient) °C/W 833 1250 833 625 625
RTH(J-C) Thermal Resistance
(Junction to Case) °C/W
SURFACE MOUNT NPN SILICON
HIGH FREQUENCY TRANSISTOR
NE687
SERIES
FEATURES
30 (SOT 323 STYLE)
18 (SOT 343 STYLE)
39 (SOT 143 STYLE)
33 (SOT 23 STYLE)
19 (3 PIN ULTRA SUPER
MINI MOLD)
39R (SOT 143R STYLE)
DESCRIPTION
The NE687 series of NPN epitaxial silicon transistors are
designed for low cost, low noise applications. Excellent perfor-
mance at low voltage/low current makes this series an ideal
choice for portable wireless applications at 1.6, 1.9 and 2.4
GHz. The NE687 die is available in six different low cost plastic
surface mount package styles.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
• LOW NOISE: 1.3 dB AT 2.0 GHz
• LOW VOLTAGE OPERATION
• EASY TO MATCH
• HIGH GAIN BANDWIDTH PRODUCT: fT of 13 GHz
• AVAILABLE IN SIX LOW COST PLASTIC SURFACE
MOUNT PACKAGE STYLES
Notes:
1. Precaution: Devices are ESD sensitive. Use proper handling procedures.
2. Electronic Industrial Association of Japan.
California Eastern Laboratories
3. Pulsed measurement, PW ≤ 350 µs, duty cycle ≤ 2%.
4. The emitter terminal should be connected to the ground terminal
of the 3 terminal capacitance bridge.
