©
1994
DATA SHEET
SILICON TRANSISTOR
2SC5186
NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE
FOR LOW-NOISE MICROWAVE AMPLIFICATION
Caution; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.
FEATURES
• Low Noise
NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz
NF = 1.3 dB
TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
• Ultra Super Mini-Mold package
ORDERING INFORMATION
PART
QUANTITY ARRANGEMENT
NUMBER
2SC5186 50 units/box Embossed tape, 8 mm wide,
2SC5186-T1 3 000 units/reel
Pin 3 (Collector) facing the perforations.
* Contact your NEC sales representatives to order samples for
evaluation (available in batches of 50).
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Collector to Base Voltage VCBO 5V
Collector to Emitter Voltage VCEO 3V
Emitter to Base Voltage VEBO 2V
Collector Current I
C 30 mA
Total Power Dissipation PT 90 mW
Junction Temperature Tj 150 ˚ C
Storage Temperature T
stg –65 to +150 ˚C
Document No. P12110EJ2V0DS00 (2nd edition)
(Previous No. TC-2483)
Date Published November 1996 N
Printed in Japan
1.6 ± 0.1
0.8 ± 0.1
1.6 ± 0.1
1.0
0.5 0.5
0.2
+0.1
–0
0.3
+0.1
–0
2
1
3
0.75 ± 0.05
0.6
0.15
+0.1
–0.05
0 to 0.1
PACKAGE DIMENSIONS
(Units: mm)
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
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