©
1994
DATA SHEET
SILICON TRANSISTOR
2SC5185
NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE
FOR LOW-NOISE MICROWAVE AMPLIFICATION
FEATURES
• Low Noise
NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz
NF = 1.3 dB
TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
• Super Mini-Mold package
ORDERING INFORMATION
PART
QUANTITY ARRANGEMENT
NUMBER
2SC5185-T1 Embossed tape, 8 mm wide,
pins No. 3 (base), and No. 4
(emitter) facing the perforations
2SC5185-T2
3 000 units/reel
Embossed tape, 8 mm wide,
pins No. 1 (collector) and No. 2
(emitter) facing the perforations
* Contact your NEC sales representative to order samples for
evaluation.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Collector to Base Voltage VCBO 5V
Collector to Emitter Voltage V
CEO 3V
Emitter to Base Voltage VEBO 2V
Collector Current IC 30 mA
Total Power Dissipation P
T 90 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg –65 to +150 °C
Caution; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.
2.1± 0.2
1.25 ± 0.1
2.0 ± 0.2
(1.25)
0.60 0.65
(1.3)
0.9 ± 0.1
0.3
0 to 0.1
0.15
+0.1
–0.05
0.4
+0.1
–0.05
0.3
+0.1
–0.05
0.3
+0.1
–0.05
0.3
+0.1
–0.05
12
43
PIN CONNECTIONS
T86
1. Collector
2. Emitter
3. Base
4. Emitter
Document No. P12109EJ2V0DS00 (2nd edition)
(Previous No. TC-2482)
Date Published November 1996 N
Printed in Japan
PACKAGE DIMENSIONS
(Units: mm)