©
1994
DATA SHEET
SILICON TRANSISTOR
2SC5182
NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE
FOR LOW-NOISE MICROWAVE AMPLIFICATION
FEATURES
• Low noise
• NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz
• NF = 1.3 dB
TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
• Mini-Mold package
EIAJ: SC-59
ORDERING INFORMATION
PART
QUANTITY ARRANGEMENT
NUMBER
2SC5182-T1 Embossed tape, 8 mm wide,
Pin No. 3 (Collector)
facing the perforations
2SC5182-T2
3 000 units/reel
Embossed tape, 8 mm wide,
Pins No. 1 (Emitter) and No. 2 (Base)
facing the perforations
*
Contact your NEC sales representative to order samples for evaluation
(available in batches of 50).
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Collector to Base Voltage VCBO 5V
Collector to Emitter Voltage VCEO 3V
Emitter to Base Voltage VEBO 2V
Collector Current I
C 30 mA
Total Power Dissipation PT 90 mW
Junction Temperature Tj 150 ˚C
Storage Temperature T
stg –65 to +150 ˚C
Caution; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.
Document No. P12106EJ2V0DS00 (2nd edition)
(Previous No. TC-2479)
Date Published November 1996 N
Printed in Japan
PACKAGE DIMENSIONS
(Units: mm)
2.9±0.2
0.950.95
0.4 –0.05
+0.1
1.5
0.4 –0.05
+0.1
2.8±0.2
0.65
–0.15
+0.1
3
2
1
0.16 –0.06
+0.1
0 to 0.1
1.1 to 1.4
0.3
Marking
T86
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector