SILICON TRANSISTOR
FEATURES
• Low current consumption and high gain
|S21e|
2
= 10.5 dBTYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz
|S21e|
2
= 9.0 dBTYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz
• Ultra Super Mini-Mold package
ORDERING INFORMATION
PART
QUANTITY ARRANGEMENT
NUMBER
2SC5181 50 units/box
2SC5181-T1 3 000 units/reel
* Contact your NEC sales representatives to order samples for
evaluation (available in batches of 50).
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Collector to Base Voltage VCBO 5V
Collector to Emitter Voltage VCEO 3V
Emitter to Base Voltage VEBO 2V
Collector Current I
C 10 mA
Total Power Dissipation PT 30 mW
Junction Temperature Tj 150 °C
Storage Temperature T
stg –65 to +150 °C
2SC5181
Document No. P12105EJ2V0DS00 (2nd edition)
(Previous No. TC-2478)
Date Published November 1996 N
Printed in Japan
©
1994
DATA SHEET
NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE
FOR LOW-NOISE MICROWAVE AMPLIFICATION
1.6 ± 0.1
0.8 ± 0.1
3
2
1
1.6 ± 0.1
1.0
0.5 0.5
0.75 ± 0.05
0.6
0.15
–0.05
+0.1
0.3
–0
+0.1
0.2
–0
+0.1
0 to 0.1
84
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
PACKAGE DIMENSIONS
(Units: mm)
Embossed tape, 8 mm wide, pin No. 3
(collector) facing the perforation
Caution; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.
