©
1994
DATA SHEET
SILICON TRANSISTOR
2SC5180
FEATURES
• Low current consumption and high gain
S
21e
2
= 12 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz
S21e
2
= 11 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz
• Supper Mini-Mold package
ORDERING INFORMATION
PART
QUANTITY ARRANGEMENT
NUMBER
Embossed tape, 8 mm wide, pins No. 3
2SC5180–T1 (base) and No. 4 (emitter) facing the
3 000 units/reel
perforations
Embossed tape, 8 mm wide, pins No. 1
2SC5180–T2 (collector) and No. 2 (emitter) facing the
perforations
* Contact your NEC sales representatives to order samples for evaluation (available
in batches of 50).
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Collector to Base Voltage VCBO 5V
Collector to Emitter Voltage VCEO 3V
Emitter to Base Voltage VEBO 2V
Collector Current I
C 10 mA
Total Power Dissipation PT 30 mW
Junction Temperature Tj 150 °C
Storage Temperature T
stg –65 to +150 °C
2.0 ± 0.2
1.25 ± 0.1
21
34
(1.25)
0.650.60
0.3
+0.1
–0.05
0.4
+0.1
–0.05
0.3
+0.1
–0.05
0.3
+0.1
–0.05
(1.3)
0.9 ± 0.1
0.3
0.15
+0.1
–0.05
0 to 0.1
2.1 ± 0.2
T84
PACKAGE DIMENSIONS
(Units : mm)
1. Collector
2. Emitter
3. Base
4. Emitter
PIN CONNECTIONS
NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE
FOR LOW-NOISE MICROWAVE AMPLIFICATION
Caution; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.
Document No. P12104EJ2V0DS00 (2nd edition)
(Previous No. TC-2477)
Date Published December 1996 N
Printed in Japan