SILICON TRANSISTOR
FEATURES
• Low current consumption and high gain
|S21e|
2
= 11.5 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz
|S21e|
2
= 10.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz
• 4-pin Mini-Mold package
EIAJ: SC-61
ORDERING INFORMATION
PART
QUANTITY ARRANGEMENT
NUMBER
2SC5178-T1 3000 units/reel
2SC5178-T2 3000 units/reel
* Contact your NEC sales representatives to order samples for
evaluation (available in batches of 50).
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Collector to Base Voltage VCBO 5V
Collector to Emitter Voltage VCEO 3V
Emitter to Base Voltage V
EBO 2V
Collector Current IC 10 mA
Total Power Dissipation PT 30 mW
Junction Temperature T
j 150 °C
Storage Temperature Tstg –65 to +150 °C
2SC5178
Document No. P12102EJ2V0DS00 (2nd edition)
(Previous No. TC-2475)
Date Published November 1996 N
Printed in Japan
NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE
FOR LOW-NOISE MICROWAVE AMPLIFICATION
PACKAGE DIMENSIONS
(Units: mm)
CAUTION; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.
Embossed tape, 8 mm wide, pins
No. 3 (base) and No. 4 (emitter) facing
the perforations
Embossed tape, 8 mm wide, pins
No. 1 (collector) and No. 2 (emitter)
facing the perforations
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
0.4
+0.1
–0.05
2.8
+0.2
–0.3
1.5
+0.2
–0.1
0.4
+0.1
–0.05
0.6
+0.1
–0.05
0.4
+0.1
–0.05
1 2
34
0.850.95
(1.8)
2.9±0.2
(1.9)
0.16
+0.1
–0.06
5°5°
5°5°
0 to 0.1
0.8
1.1
+0.2
–0.1
T84
©
1994
DATA SHEET
