SILICON TRANSISTOR
FEATURES
• Low Current Consumption and High Gain
|S21e|
2
= 9.0 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz
|S21e|
2
= 8.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz
• Mini-Mold package
EIAJ: SC-59
ORDERING INFORMATION
PART
QUANTITY ARRANGEMENT
NUMBER
2SC5177-T1 3 000 units/reel
2SC5177-T2 3 000 units/reel
Remark Contact your NEC sales representatives to order samples
for evaluation (available in batches of 50).
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Collector to Base Voltage VCBO 5V
Collector to Emitter Voltage VCEO 3V
Emitter to Base Voltage V
EBO 2V
Collector Current IC 10 mA
Total Power Dissipation PT 30 mW
Junction Temperature T
j 150 °C
Storage Temperature Tstg –65 to +150 °C
2SC5177
Document No. P12101EJ2V0DS00 (2nd edition)
(Previous No. TC-2474)
Date Published November 1996 N
Printed in Japan
©
1994
DATA SHEET
NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE
FOR LOW-NOISE MICROWAVE AMPLIFICATION
PACKAGE DIMENSIONS
(Units: mm)
CAUTION; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.
Embossed tape, 8 mm wide, pin
No. 3 (collector) facing the
perforations
Embossed tape, 8 mm wide, pins
No. 1 (emitter) and No. 2 (base)
facing the perforations
0 to 0.1
0.16
+0.1
–0.06
Marking
0.3
1.1 to 1.4
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
0.4
+0.1
–0.05
0.95 0.95
2
1
2.9±0.2
0.4
+0.1
–0.05
2.8±0.2
1.5
0.65
+0.1
–0.15
3
T84
