PART
NUMBER
Embossed tape 8 mm wide.
2SC4959–T1 3 Kpcs/Reel. Pin3 (Collector) face to perfora-
tion side of the tape.
Embossed tape 8 mm wide.
2SC4959–T2 3 Kpcs/Reel. Pin1 (Emitter), Pin2 (Base) face
to perforation side of the tape.
©
1992
DATA SHEET
The mark ★ shows revised points.
SILICON TRANSISTOR
2SC4959
Caution; Electrostatic sensitive Device.
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
SUPER MINI MOLD
FEATURES
• Low Noise, High Gain
• Low Voltage Operation
• Low Feedback Capacitance
Cre = 0.4 pF TYP.
ORDERING INFORMATION
QUANTITY PACKING STYLE
Document No. P10382EJ2V0DS00 (2nd edition)
(Previous No. TD-2410)
Date Published July 1995 P
Printed in Japan
1995
1.25 ± 0.1
2.1 ± 0.1
2.0 ± 0.2
0.3
–0
+0.1
0.65 0.65
0.3
–0
+0.1
2
1
3
0.9 ± 0.1
0.3
0.15
–0.05
+0.1
0 to 0.1
Marking
PACKAGE DIMENSIONS
in millimeters
PIN CONNECTIONS
1.
2.
3.
Emitter
Base
Collector
Collector to Base Voltage VCBO 9V
Collector to Emitter Voltage V
CEO 6V
Emitter to Base Voltage VEBO 2V
Collector Current I
C 30 mA
Total Power Dissipation P
T 150 mW
Junction Temperature Tj 150 °C
Storage Temperature T
stg –65 to +150 °C
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
* Please contact with responsible NEC person, if you require evaluation
sample.
Unit sample quantity shall be 50 pcs. (Part No.: 2SC4959)
