PART
NUMBER
Embossed tape 8 mm wide.
2SC4958–T1 3 Kpcs/Reel. Pin3 (Collector) face to perfora-
tion side of the tape.
Embossed tape 8 mm wide.
2SC4958–T2 3 Kpcs/Reel. Pin1 (Emitter), Pin2 (Base) face
to perforation side of the tape.
©
1992
DATA SHEET
The mark ★ shows revised points.
SILICON TRANSISTOR
2SC4958
Caution; Electrostatic sensitive Device.
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
SUPER MINI MOLD
Document No. P10380EJ2V0DS00 (2nd edition)
(Previous No. TD–2409)
Date Published July 1995 P
Printed in Japan
1995
FEATURES
• Low Noise, High Gain
• Low Voltage Operation
• Low Feedback Capacitance
Cre = 0.3 pF TYP.
ORDERING INFORMATION
QUANTITY PACKING STYLE
* Please contact with responsible NEC person, if you require evaluation sample.
Unit sample quantity shall be 50 pcs. (Part No.: 2SC4958)
1.25 ± 0.1
2.1 ± 0.1
2.0 ± 0.2
0.3
–0
+0.1
0.65 0.65
0.3
–0
+0.1
2
1
3
0.9 ± 0.1
0.3
0.15
–0.05
+0.1
0 to 0.1
Marking
PACKAGE DIMENSIONS
in millimeters
PIN CONNECTIONS
1.
2.
3.
Emitter
Base
Collector
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Collector to Base Voltage VCBO 9V
Collector to Emitter Voltage VCEO 6V
Emitter to Base Voltage V
EBO 2V
Collector Current I
C 10 mA
Total Power Dissipation PT 60 mW
Junction Temperature T
j 150 °C
Storage Temperature T
stg –65 to +150 °C
