The information in this document is subject to change without notice.
SILICON TRANSIST OR
2SC4956
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
4 PINS MINI MOLD
FEATURES
• Low Noise, High Gain
• Low Voltage Operation
• Low Feedback Capacitance
C
re = 0.20 pF TYP.
ORDERING INFORMATION
PART
QUANTITY PACKING STYLE
NUMBER
2SC4956-T1 3 Kpcs/Reel. Embossed tape 8 mm wide.
Pin3 (Base), Pin4 (Emitter) face to perforation
side of the tape.
2SC4956-T2 3 Kpcs/Reel. Embossed tape 8 mm wide.
Pin1 (Collector), Pin2 (Emitter) face to perfora-
tion side of the tape.
* Please contact with responsible NEC person, if you require evaluation
sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC4956)
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Collector to Base Voltage VCBO 9V
Collector to Emitter Voltage VCEO 6V
Emitter to Base Voltage V
EBO 2V
Collector Current IC 10 mA
Total Power Dissipation PT 60 mW
Junction Temperature T
j 150 ˚ C
Storage Temperature Tstg –65 to +150 ˚ C
©
1993
DATA SHEET
2.8
–0.3
+0.2
1.5
–0.1
+0.2
0.4
–0.05
+0.1
0.4
–0.05
+0.1
2.9 ±0.2
(1.8)
0.85 0.95
0.6
–0.05
+0.1
0.4
–0.05
+0.1
1.1
–0.1
+0.2
0.8
0 to 0.1
0.16
–0.06
+0.1
2
3
1
4
5˚ 5˚
5˚ 5˚
(1.9)
PACKAGE DIMENSIONS
in millimeters
PIN CONNECTIONS
1.
2.
3.
4.
Collector
Emitter
Base
Emitter
Caution; Electrostatic Sensitive Device.
Document No. P10378EJ2V0DS00 (2nd edition)
(Previous No. TD-2407)
Date Published July 1995 P
Printed in Japan
