©
1993
DATA SHEET
SILICON TRANSISTOR
Document No. P10377EJ2V0DS00 (2nd edition)
(Previous No. TD-2406)
Date Published July 1995 P
Printed in Japan
2SC4955
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
MINI MOLD
FEATURES
• Low Noise, High Gain
• Low Voltage Operation
• Low Feedback Capacitance
Cre = 0.4 pF TYP.
ORDERING INFORMATION
PART
QUANTITY PACKING STYLE
NUMBER
2SC4955-T1 3 Kpcs/Reel. Embossed tape 8 mm wide.
Pin3 (Collector) face to perforation
side of the tape.
2SC4955-T2 3 Kpcs/Reel. Embossed tape 8 mm wide.
Pin1 (Emitter), Pin2 (Base) face to
perforation side of the tape.
* Please contact with responsible NEC person, if you evaluation
sample. Unit sample quantity shall be 50 pcs.
(Part No.: 2SC4955)
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Collector to Base Voltage VCBO 9V
Collector to Emitter Voltage V
CEO 6V
Emitter to Base Voltage VEBO 2V
Collector Current IC 30 mA
Total Power Dissipation P
T 180 mW
Junction Temperature Tj 150 ˚ C
Storage Temperature Tstg –64 to +150 ˚ C
PACKAGE DIMENSIONS
in millimeters
2.9±0.2
0.950.95
0.4
–0.05
+0.1
1.5
0.4
–0.05
+0.1
2.8±0.2
0.65
–0.15
+0.1
3
2
1
0.16
–0.06
+0.1
0 to 0.1
1.1 to 1.4
0.3
Marking
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector