The information in this document is subject to change without notice.
SILICON TRANSIST OR
2SC4954
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
MINI MOLD
FEATURES
• Low Noise, High Gain
• Low Voltage Operation
• Low Feedback Capacitance
C
re = 0.3 pF TYP.
ORDERING INFORMATION
PART
QUANTITY PACKING STYLE
NUMBER
2SC4954-T1 3 Kpcs/Reel. Embossed tape 8 mm wide.
Pin3 (Collector) face to perforation side of the
tape.
2SC4954-T2 3 Kpcs/Reel. Embossed tape 8 mm wide.
Pin1 (Emitter), Pin2 (Base) face to perforation
side of the tape.
* Please contact with responsible NEC person, if you require evaluation
sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC4954)
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Collector to Base Voltage VCBO 9V
Collector to Emitter Voltage VCEO 6V
Emitter to Base Voltage V
EBO 2V
Collector Current IC 10 mA
Total Power Dissipation PT 60 mW
Junction Temperature T
j 150 ˚ C
Storage Temperature Tstg –65 to +150 ˚ C
©
1993
DATA SHEET
Caution; Electrostatic Sensitive Device.
2.9±0.2
0.950.95
0.4
–0.05
+0.1
1.5
0.4
–0.05
+0.1
2.8±0.2
0.65
–0.15
+0.1
3
2
1
0.16
–0.06
+0.1
0 to 0.1
1.1 to 1.4
0.3
Marking
PACKAGE DIMENSIONS
in millimeters
PIN CONNECTIONS
1.
2.
3.
Emitter
Base
Collector
Document No. P10376EJ2V0DS00 (2nd edition)
(Previous No. TD-2405)
Date Published July 1995 P
Printed in Japan
