1998©
Document No. D16152EJ1V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON TRANSISTORS
2SC4942
NPN SILICON TRIPLE DIFFUSED TRANSISTOR
FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING
DATA SHEET
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The 2SC4942 is a transistor developed for high-speed high-
voltage switching. This transistor is ideal for use in switching
devices such as switching regulators and DC/DC converters.
FEATURES
• New package with dimensions in between those of small
signal and power signal package
• High voltage
• Fast switching speed
• Complementary transistor with the 2SA1871
QUALITY GRADES
• Standard
Please refer to “Quality Grades on NEC Semiconductor
Devices” (Document No. C11531E) published by NEC
Corporation to know the specification of quality grade on the
devices and its recommended applications.
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°
°°
°C)
Parameter Symbol Conditions Ratings Unit
Collector to base voltage V
CBO
600 V
Collector to emitter voltage V
CEO
600
V
Emitter to base voltage V
EBO
7.0
V
Collector current (DC) I
D(DC)
1.0
A
Collector current (pulse) I
D(pulse)
PW ≤ 10 ms, duty cycle ≤ 50 %
2.0 A
Total power dissipation P
T
7.5 cm
2
× 0.7 mm ceramic board mounted
2.0 W
Junction temperature T
j
150
°C
Storage temperature T
stg
−55 to +150 °C
Electrode connection
1. Emitter
2. Collector
3. Base
