DATA SHEET
SILICON TRANSISTOR
2SC4885
NPN SILICON EPITAXIAL TRANSISTOR
3 PINS SUPER MINI MOLD
DATA SHEET
Document No. P10410EJ2V0DS00 (2nd edition)
(Previous No, TC-2365)
Date Published March 1997 N
Printed in Japan
1993©
FEATURES
• Excellent Low NF in Low Frequency Band
• Low Voltage Use
• Low C
ob
: 0.9 pF TYP.
• Low Noise Voltage : 90 mV TYP.
• Super Mini Mold Package. EIAJ : SC-70
ABSOLUTE MAXIMUM RATINGS (T
a
= 25
C)
Collector to Base Voltage V
CBO
25 V
Collector to Emitter Voltage V
CEO
13 V
Emitter to Base Voltage V
EBO
3.0 V
Collector Current I
C
50 mA
Total Power Dissipation P
T
120 mW
Junction Temperature T
j
125 C
Storage Temperature T
stg
55 to +125 C
ELECTRICAL CHARACTERISTICS (T
a
= 25
C)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Collector Cutoff Current I
CBO
0.1 AV
CB
= 15 V, I
E
= 0
Emitter Cutoff Current I
EBO
0.1 AV
EB
= 2 V, I
C
= 0
Collecto r to Ba se Sa tu r a tio n Vo lta g e V
CE (sat)
0.3 V h
FE
= 10, I
C
= 5 mA
DC Current Gain h
FE
60 150
V
CE
= 5 V, I
C
= 5 mA
*1
Gain Bandwidth Product f
T
2.5 3.5 GHz V
CE
= 5 V, I
C
= 5 mA
Collecter Capacitance C
ob
0.8 1.2 pF V
CB
= 5 V, I
E
= 0, f = 1 MHz
Insertion Power Gain S
21e
2
7.0 9.0 dB V
CE
= 5 V, I
C
= 5 mA, f = 1 GHz
Noise Figure NF 3.0 dB V
CE
= 5 V, I
C
= 5 mA, f = 1 GHz
Noise Voltage NV 90 200 mV See Test Cirucit
*1
Pulse Measurement PW 350 s, Duty Cycle 2 %
h
FE
Classification
Rank R13
Marking R13
h
FE
60 to 150
PACKAGE DIMENSIONS
(Units: mm)
1.25±0.1
2
1
3
Marking
PIN CONNECTIONS
1.
2.
3.
Emitter
Base
Collector
2.1±0.1
2.0±0.20.9±0.1
0 to 0.1
0.650.3 0.65
0.3
+0.1
−0
0.3
+0.1
−0
0.15
+0.1
−0.05
