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1998©
Document No. D15605EJ3V0DS00 (3rd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SC4815
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
2002
The 2SC4815 is a power transistor developed for high-speed switching and features low V
CE(sat)
and high h
FE
.
This transistor is ideal for use as a driver in DC/DC converters and actuators.
In addition, this transistor is available for the auto mount in the radial taping specifications and for mounting cost
reduction.
FEATURES
• High h
FE
and low V
CE(sat)
:
V
CE(sat)
≤ 0.3 V @I
C
= 3.0 A, I
B
= 0.15 A
h
FE
≥ 100 @V
CE
= 2.0 V, I
C
= 1.0 A
• Available for auto mount in radial taping specifications
ABSOLUTE MAXIMUM RATINGS (Ta = 25°
°°
°C)
Parameter Symbol Ratings Unit
Collector to base voltage V
CBO
100 V
Collector to emitter voltage V
CEO
60 V
Emitter to base voltage V
EBO
7.0 V
Collector current (DC) I
C(DC)
5.0 A
Collector current (pulse) I
C(pulse)
*10 A
Base current (DC) I
B(DC)
2.5 A
Total power dissipation P
T
1.8 W
Junction temperature T
j
150
°C
Storage temperature T
stg
−55 to +150 °C
*PW ≤ 300
µ
s, duty cycle ≤ 10%
