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1998©
Document No. D15604EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SC4814
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
2002
The 2SC4814 is a power transistor featuring low-saturation voltage and high h
FE
. This transistor is ideal for high-
precision control such as PWM control for pulse motors or brushless motors in OA and FA equipment and for
solenoid driving in automotive equipment.
In addition, this transistor features a package that can be auto-mounted in radial taping specifications, thus
contributing to mounting cost reduction.
FEATURES
• Low V
CE(sat)
: V
CE(sat)
≤ 0.3 V @I
C
= 1.5 A, I
B
= 10 mA
• High hFE
: h
FE
= 300 to 1,200 @V
CE
= 2.0 V, I
C
= 1.0 A
• On-chip dumper-diode
• Auto-mounting possible in radial taping specifications
ABSOLUTE MAXIMUM RATINGS (Ta = 25°
°°
°C)
Parameter Symbol Conditions Ratings Unit
Collector to base voltage V
CBO
120 V
Collector to emitter voltage V
CEO
100 V
Emitter to base voltage V
EBO
7.0 V
Collector current (DC) I
C(DC)
±2.5
A
Collector current (pulse) I
C(pulse)
PW ≤ 300
µ
s, duty cycle ≤ 10% ±5.0
A
Base current (DC) I
B(DC)
1.0 A
Total power dissipation P
T
Ta = 25°C
1.8 W
Junction temperature T
j
150
°C
Storage temperature T
stg
−55 to +150 °C
