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2SC4813

2SC4813首页预览图
型号: 2SC4813
PDF文件:
  • 2SC4813 PDF文件
  • 2SC4813 PDF在线浏览
功能描述: NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
PDF文件大小: 169.8 Kbytes
PDF页数: 共6页
制造商: NEC[NEC]
制造商LOGO: NEC[NEC] LOGO
制造商网址: http://www.nec.com/
捡单宝2SC4813
供应商
型号
品牌
封装
批号
库存数量
备注
询价
  • 深圳市坤融电子有限公司

    16

    0755-2399097517318082080,13510287235肖瑶,树平航都大厦11FG11012384

  • 2SC4813
  •  
  •  
  • 2021+ 
  • 36530 
  • 专业配单100%原装进口 

  • 深圳市恒佳微电子有限公司

    8

    0855-82710336,8253315618926541169朱经理,张小姐0755-83211610华强北路上步工业区501栋11楼1109室11011932

  • 2SC4813
  •  
  •  
  • 23+ 
  • 66000 
  • 优势原装货支持最低价 

  • 集好芯城

    16

    0755-8328588218188616606陈妍深圳市福田区深南中路3023号汉国中心55楼11010804

  • 2SC4813(O)-T
  • NEC 
  • DIP-3 
  • 最新批? 
  • 75995 
  • 原厂原装现货现卖 

PDF页面索引
120%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
1998©
Document No. D15603EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SC4813
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
2002
The 2SC4813 is a power transistor developed for high-speed switching and features high h
FE
and low V
CE(sat)
.
This transistor is ideal for use as a driver in DC/DC converters and actuators.
In addition, this transistor features a package that can be auto-mounted in radial taping specifications, thus
contributing to mounting cost reduction.
FEATURES
Low V
CE(sat)
: V
CE(sat)
0.3 V @I
C
= 3.0 A, I
B
= 30 mA
High hFE
: h
FE
= 450 to 2,000 @V
CE
= 2.0 V, I
C
= 3.0 A
On-chip dumper-diode
Auto-mounting possible in radial taping specifications
ABSOLUTE MAXIMUM RATINGS (Ta = 25°
°°
°C)
Parameter Symbol Conditions Ratings Unit
Collector to base voltage V
CBO
100 V
Collector to emitter voltage V
CEO
100 V
Emitter to base voltage V
EBO
7.0 V
Collector current (DC) I
C(DC)
±7.5
A
Collector current (pulse) I
C(pulse)
PW 10 ms, duty cycle 2% ±10
A
Base current (DC) I
B(DC)
2.0 A
Total power dissipation P
T
Ta = 25°C
1.8 W
Junction temperature T
j
150
°C
Storage temperature T
stg
55 to +150 °C
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