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1998©
Document No. D15603EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SC4813
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
2002
The 2SC4813 is a power transistor developed for high-speed switching and features high h
FE
and low V
CE(sat)
.
This transistor is ideal for use as a driver in DC/DC converters and actuators.
In addition, this transistor features a package that can be auto-mounted in radial taping specifications, thus
contributing to mounting cost reduction.
FEATURES
• Low V
CE(sat)
: V
CE(sat)
≤ 0.3 V @I
C
= 3.0 A, I
B
= 30 mA
• High hFE
: h
FE
= 450 to 2,000 @V
CE
= 2.0 V, I
C
= 3.0 A
• On-chip dumper-diode
• Auto-mounting possible in radial taping specifications
ABSOLUTE MAXIMUM RATINGS (Ta = 25°
°°
°C)
Parameter Symbol Conditions Ratings Unit
Collector to base voltage V
CBO
100 V
Collector to emitter voltage V
CEO
100 V
Emitter to base voltage V
EBO
7.0 V
Collector current (DC) I
C(DC)
±7.5
A
Collector current (pulse) I
C(pulse)
PW ≤ 10 ms, duty cycle ≤ 2% ±10
A
Base current (DC) I
B(DC)
2.0 A
Total power dissipation P
T
Ta = 25°C
1.8 W
Junction temperature T
j
150
°C
Storage temperature T
stg
−55 to +150 °C