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2SC4811

2SC4811首页预览图
型号: 2SC4811
PDF文件:
  • 2SC4811 PDF文件
  • 2SC4811 PDF在线浏览
功能描述: NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING
PDF文件大小: 130.57 Kbytes
PDF页数: 共6页
制造商: NEC[NEC]
制造商LOGO: NEC[NEC] LOGO
制造商网址: http://www.nec.com/
捡单宝2SC4811
供应商
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品牌
封装
批号
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PDF页面索引
120%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
1998©
Document No. D15602EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
DARLINGTON POWER TRANSISTOR
2SC4811
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR HIGH-SPEED SWITCHING
DATA SHEET
2002
The 2SC4811 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control such
as PWM control for pulse motors or brushless motors in OA and FA equipment.
In addition, this transistor features a package that can be auto-mounted in radial taping specifications, thus
contributing to mounting cost reduction.
FEATURES
Auto-mounting possible in radial taping specifications
Resin-molded insulation type package with power rating of 1.8 W in stand-alone conditions
On-chip C-to-E reverse diode
Fast switching speed
ABSOLUTE MAXIMUM RATINGS (Ta = 25°
°°
°C)
Parameter Symbol Ratings Unit
Collector to base voltage V
CBO
100 V
Collector to emitter voltage V
CEO
100 V
Emitter to base voltage V
EBO
8.0 V
Collector current (DC) I
C(DC)
±8.0
A
Collector current (pulse) I
C(pulse)
*
±16
A
Base current (DC) I
B(DC)
0.8 A
Total power dissipation P
T
** 1.8 W
Junction temperature T
j
150
°C
Storage temperature T
stg
55 to +150 °C
*PW 300
µ
s, duty cycle 10%
** T
a
= 25°C
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