©
2001
NPN SILICO N EPITAXIAL TRANSI STO R
2SC4783
NPN SILICON EPITAXIAL TRANSISTOR
DATA SHEET
Document No. D15616EJ1V0DS00 (1st edition)
Date Published July 2001 NS CP(K)
Printed in Japan
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confirm that this is the latest version.
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availability and additional information.
DESCRIPTION
The 2SC4783 is NPN silicon epitaxial transistor.
FEATURES
• High DC current gain: hFE2
= 200 TYP.
• High voltage: V
CEO
= 50 V
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Collector to Base Voltage V
CBO
60 V
Collector to Emitter Voltage V
CEO
50 V
Emitter to Base Voltage V
EBO
5.0 V
Collector Current (DC) I
C(DC)
100 mA
Collector Current (pulse)
Note1
I
C(pulse)
200 mA
Total Power Dissipation (T
A
= 25°C)
Note2
P
T
200 mW
Junction Temperature T
j
150 °C
Storage Temperature Range T
stg
–55 to + 150 °C
Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50%
2.
When mounted on ceramic substrate of 3.0 cm
2
x 0.64 mm
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTE RISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Collect or Cut-off Current I
CBO
V
CB
= 60 V, I
E
= 0 100 nA
Emitter Cut-off Current I
EBO
V
EB
= 5.0 V, I
C
= 0 100 nA
DC Current Gain
Note
h
FE1
V
CE
= 6.0 V, I
C
= 0.1 mA 50 −
h
FE2
V
CE
= 6.0 V, I
C
= 1.0 mA 90 200 600 −
Base to E mit ter Volt age
Note
V
BE
V
CE
= 6.0 V, I
C
= 1.0 mA 0.62 V
Collect or Saturati on V ol tage
Note
V
CE(sat)
I
C
= 100 mA, I
B
= 10 mA 0.15 0.3 V
Base Saturation V ol t age
Note
V
BE(sat)
I
C
= 100 mA, I
B
= 10 mA 0.86 1.0 V
Gain Bandwidth Product f
T
V
CE
= 6.0 V, I
E
= −10 mA 150 250 MHz
Output Capaci tance C
ob
V
CE
= 6.0 V, I
E
= 0, f = 1.0 MHz 3.0 4.0 pF
Note Pulsed: PW ≤ 350
µ
s, Duty Cycle ≤ 2%
h
FE
CLASSFICATION
MarkingL4L5L6L7
h
FE2
90 to 180 135 to 270 200 to 400 300 to 600
PACKAGE DRAWING (Unit: mm)
0.3 ± 0.05
1.6 ± 0.1
0.8 ± 0.1
2
0.2
+0.1
–0
0.5
1: Emitter
2: Base
3: Collector
0.5
1.0
1.6 ± 0.1
3
1
0.6
0.75 ± 0.05
0 to 0.1
0.1
+0.1
–0.05
