R07DS0275EJ0400 Rev.4.00 Page 1 of 5
Mar 28, 2011
Preliminary Datasheet
2SC4702
Silicon NPN Epitaxial
Application
High voltage amplifier
Features
• High breakdown voltage
V
CEO
= 300 V
• Small Cob
Cob = 1.5 pF Typ.
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
1
2
3
1. Emitter
2. Base
3. Collecto
Note: Marking is “XV–”.
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
CBO
300 V
Collector to emitter voltage V
CEO
300 V
Emitter to base voltage V
EBO
5 V
Collector current I
C
50 mA
Collector power dissipation P
C
150 mW
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
R07DS0275EJ0400
(Previous: REJ03G0729-0300)
Rev.4.00
Mar 28, 2011