DATA SHEET
SILICON TRANSISTOR
2SC4570
NPN SILICON EPITAXIAL TRANSISTOR
SUPER MINI MOLD
DATA SHEET
Document No. P10408EJ2V0DS00 (2nd edition)
(Previous No. TC-2434)
Date Published March 1997 N
Printed in Japan
1993©
DESCRIPTION
The 2SC4570 is a low supply voltage transistor designed for UHF
OSC/MIX.
It is suitable for a high density surface mount assembly since the
transistor has been applied super mini mold package.
FEATURES
• High f
T
: 5.5 GHz TYP. (@ V
CE
= 5 V, I
C
= 5 mA, f = 1 GHz)
• Low C
ob
: 0.7 pF TYP. (@ V
CB
= 5 V, I
E
= 0, f = 1 MHz)
• Super Mini Mold Package. (EIAJ : SC-70)
ORDERING INFORMATION
PART
NUMBER
QUANTITY PACKING STYLE
2SC4570-T1 3 kpcs./Reel Embossed tape 8 mm wide. Pin 3 (Collector) face
to perforation side of the tape.
2SC4570-T2 3 kpcs./Reel Embossed tape 8 mm wide. Pin 1 (Emitter), Pin 2
(Base) face to perforation side of the tape.
* Please contact with responsible NEC person, if you require evaluation
sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC4570)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C)
Collector to Base Voltage V
CBO
20 V
Collector to Emitter Voltage V
CEO
12 V
Emitter to Base Voltage V
EBO
3V
Collector Current I
C
30 mA
Total Power Dissipation P
T
120 mW
Junction Temperature T
j
125 C
Storage Temperature T
stg
55 to +125 C
PACKAGE DIMENSIONS
(Units: mm)
1.25±0.1
2
1
3
Marking
PIN CONNECTIONS
1.
2.
3.
Emitter
Base
Collector
2.1±0.1
2.0±0.20.9±0.1
0 to 0.1
0.650.3 0.65
0.3
+0.1
−0
0.3
+0.1
−0
0.15
+0.1
−0.05