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1998©
Document No. D15599EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SC4553
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
2002
The 2SC4553 is a power transistor designed especially for low
collector saturation voltage and features large current switching at a
low power dissipation. In addition, a high h
FE
enables alleviation of
the driver load.
FEATURES
• High h
FE
and low V
CE(sat)
:
h
FE
≅ 800 (V
CE
= 2 V, I
C
= 3 A)
V
CE(sat)
≅ 0.12 V (I
C
= 3 A, I
B
= 0.03 A)
• On-chip C to E damper diode
• Mold package that does not require an insulating board or
insulation bushing
ABSOLUTE MAXIMUM RATINGS (Ta = 25°
°°
°C)
Parameter Symbol Ratings Unit
Collector to base voltage V
CBO
100 V
Collector to emitter voltage V
CEO
100 V
Emitter to base voltage V
EBO
7.0 V
Collector current (DC) I
C(DC)
±7.5
A
Collector current (pulse) I
C(pulse)
*
±10
A
Base current (DC) I
B(DC)
2.0 A
Total power dissipation
P
T
(Tc = 25°C)
30 W
Total power dissipation
P
T
(Ta = 25°C)
2.0 W
Junction temperature T
j
150
°C
Storage temperature T
stg
−55 to +150 °C
*PW ≤ 10 ms, duty cycle ≤ 50%
PACKAGE DRAWING (UNIT: mm)
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