The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
1998©
Document No. D15596EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SC4550
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
2002
The 2SC4550 is a power transistor developed for high-speed
switching and features low V
CE(sat)
and high h
FE
. This transistor is
ideal for use in drivers such as DC/DC converters and actuators.
In addition, a small resin-molded insulation type package
contributes to high-density mounting and reduction of mounting
cost.
FEATURES
• High h
FE
and low V
CE(sat)
:
h
FE
≥ 100 (V
CE
= 2 V, I
C
= 1.5 A)
V
CE(sat)
≤ 0.3 V (I
C
= 4 A, I
B
= 0.2 A)
• Mold package that does not require an insulating board or
insulation bushing
ABSOLUTE MAXIMUM RATINGS (Ta = 25°
°°
°C)
Parameter Symbol Ratings Unit
Collector to base voltage V
CBO
100 V
Collector to emitter voltage V
CEO
60 V
Emitter to base voltage V
EBO
7.0 V
Collector current (DC) I
C(DC)
7.0 A
Collector current (pulse) I
C(pulse)
*14A
Base current (DC) I
B(DC)
3.5 A
Total power dissipation
P
T
(Tc = 25°C)
30 W
Total power dissipation
P
T
(Ta = 25°C)
2.0 W
Junction temperature T
j
150
°C
Storage temperature T
stg
−55 to +150 °C
*PW ≤ 300
µ
s, duty cycle ≤ 10%
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Base
2. Collector
3. Emitter
