2SC4548
0.2A , 400V
NPN Plastic Encapsulated Transistor
Elektronische Bauelemente
04-Nov-2011 Rev. A Page 1 of 1
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
Collector
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Small Flat Package
High Breakdown Voltage
Excellent h
FE
Linearity
CLASSIFICATION OF h
FE
Product-Rank
2SC4548-D 2SC4548-E
Range 60~120 100~200
Marking
CN
PACKAGE INFORMATION
Package MPQ Leader Size
SOT-89 1K 7 inch
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
Parameter Symbol Ratings Unit
Collector-Base Voltage V
CBO
400 V
Collector-Emitter Voltage V
CEO
400 V
Emitter-Base Voltage V
EBO
5 V
Collector Current-Continuous I
C
200 mA
Collector Power Dissipation P
C
500 mW
Maximum Junction to Ambient R
θJA
250 °C / W
Junction & Storage Temperature T
J
, T
STG
150, -55~150 °C
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified)
Parameter Symbol Min. Typ. Max.
Unit
Test conditions
Collector-Base Breakdown Voltage V
(BR)CBO
400 - - V I
C
=10µA, I
E
=0
Collector-Emitter Breakdown Voltage V
(BR)CEO
400 - - V I
C
=1mA, I
B
=0
Emitter-Base Breakdown Voltage V
(BR)EBO
5 - - V I
E
=10µA, I
C
=0
Collector Cut-Off Current I
CBO
-
- 0.1 µA V
CB
=300V, I
E
=0
Emitter Cut-Off Current I
EBO
- - 0.1 µA V
EB
=4V, I
C
=0
DC Current Gain h
FE
60 - 200 V
CE
=10V, I
C
= 50mA
Collector-Emitter Saturation voltage V
CE(sat)
- - 0.6 V I
C
=50mA, I
B
= 5mA
Base-Emitter Saturation Voltage V
BE(sat)
- - 1 V I
C
=50mA, I
B
= 5mA
Transition Frequency f
T
- 70 - MHz
V
CE
=30V, I
C
=10mA
Collector Output Capacitance C
OB
- 4 - pF V
CB
=30V, I
E
=0, f=1MHz
REF.
REF.
D 2.25 2.60 K 0.32 0.52
E 1.50 1.85 L 0.35 0.44
F 0.89 1.20
SOT-89