DATA SHEET
SILICON TRANSISTOR
2SC4536
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL
TRANSISTOR
DATA SHEET
Document No. P10369EJ2V1DS00 (2nd edition)
Date Published March 1997 N
Printed in Japan
1994©
DESCRIPTION
The 2SC4536 is designed for use in middle power, low distortion low
noise figure RF amplifier. It features excellent linearity and large dynamic
range, which make it suitable for CATV, telecommunication, and other use,
it employs plastic surface mount type package (SOT-89).
FEATURES
• Low Distortion
IM
2
= 57.5 dB TYP. @ V
CE
= 10 V, I
C
= 50 mA
IM
3
= 82 dB TYP. @ V
CE
= 10 V, I
C
= 50 mA
• Low Noise
NF = 1.5 dB TYP. @ V
CE
= 10 V, I
C
= 10 mA, f = 1 GHz
• Power Mini Mold Package Used. High Power Dissipation.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C)
Maximum Voltage and Current (T
A
= 25 C)
Collector to Base Voltage V
CBO
30 V
Collector to Emitter Voltage V
CEO
15 V
Emitter to Base Voltage V
EBO
3.0 V
Collector Current I
C
250 mA
Maximum Power Dissipation
Total Power Dissipation
at 25 C Ambient Temperature P
T
* 2.0 W
Maximum Temperatures
Junction Temperature T
j
150 C
Storage Temperature Range T
stg
65 to +150 C
* 0.7 mm 16 cm
2
double sided ceramic substrate. (Copper plating)
PACKAGE DIMENSIONS
(Unit: mm)
Term, Connection
E
C
B
(SOT-89)
: Emitter
: Collector (Fin)
: Base
0.41
−0.03
+0.05
0.47
±0.06
0.42±0.06
0.42
±0.06
4.5±0.1
1.6±0.2
3.0
EB
C
1.5
0.8 MIN.
2.5±0.1
4.0±0.25
1.5±0.1