2SC4375
1.5 A , 30 V
NPN Plastic-Encapsulate Transistor
Elektronische Bauelemente
14-Jan-2010 Rev. A Page 1 of 1
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
A
E
C
DB
KH
F G
L
J
1
2
3
4
Base
Emitte
Collector
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Small Flat Package.
Low Collector-Emitter Saturation Voltage.
CLASSIFICATION OF h
FE
PACKAGE INFORMATION
Package MPQ LeaderSize
SOT-89 1K 7’ inch
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C unless otherwise specified)
Parameter Symbol Rating Unit
Collector to Base Voltage V
CBO
30 V
Collector to Emitter Voltage V
CEO
30 V
Emitter to Base Voltage V
EBO
5 V
Continuous Collector Current I
C
1.5 A
Collector Power Dissipation P
C
500 mW
Thermal Resistance Junction to Ambient R
θJA
250 °C / W
Junction, Storage Temperature T
J
, T
STG
150, -55~150 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise specified)
Parameter Symbol Min Typ Max Unit Test condition
Collector to Base Breakdown Voltage V
(BR)CBO
30 - - V I
C
=1mA, I
E
=0
Collector to Emitter Breakdown Voltage V
(BR)CEO
30 - - V I
C
=10mA, I
B
=0
Emitter to Base Breakdown Voltage V
(BR)EBO
5 - - V I
E
=1mA, I
C
=0
Collector Cut-Off Current I
CBO
- - 0.1 μA V
CB
=30 V, I
E
=0
Emitter Cut-Off Current I
EBO
- - 0.1 μA V
EB
=5V, I
C
=0
DC Current Gain h
FE
100 - 320 V
CE
=2V, I
C
=500mA
Collector to Emitter Saturation Voltage V
CE(sat)
- - 2 V I
C
=1.5A, I
B
=30mA
Base to emitter Voltage V
BE
- - 1 V V
CE
=2V, I
C
=500mA
Transition Frequency f
T
- 120 - MHz V
CE
=2V, I
C
=500mA
Collector Output Capacitance C
ob
- - 40 pF V
CB
=10V, I
E
=0 , f=1MHz
Product-Rank 2SC4375-O 2SC4375-Y
Range 100~200 160~320
Marking GO GY
SOT-89
REF.
Millimete
REF.
Millimete
Min. Max. Min. Max.
A 4.40 4.60 G 0.40 0.58
B 3.94 4.25 H 1.50 TYP
C 1.40 1.60 J 3.00 TYP
D 2.30 2.60 K 0.32 0.52
E 1.50 1.70 L 0.35 0.44
F 0.89 1.20