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1998©
Document No. D15594EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
DARLINGTON POWER TRANSISTOR
2SC4351
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR HIGH-SPEED SWITCHING
DATA SHEET
2002
The 2SC4351 is a high-speed Darlington power transistor. This
transistor is ideal for high-precision control such as PWM control for
pulse motors or blushless motor of OA and FA equipment.
FEATURES
• Mold package that does not require an insulating board or
insulation bushing
• On-chip C to B constant voltage diode for surge voltage
absorption
• On-chip C to E reverse diode
• Fast switching speed
ABSOLUTE MAXIMUM RATINGS (Ta = 25°
°°
°C)
Parameter Symbol Ratings Unit
Collector to base voltage V
CBO
60 ± 10
V
Collector to emitter voltage V
CEO
60 ± 10
V
Emitter to base voltage V
EBO
8.0 V
Collector current (DC) I
C(DC)
±5.0
A
Collector current (pulse) I
C(pulse)
*
±10
A
Base current (DC) I
B(DC)
0.5 A
Total power dissipation
P
T
(Tc = 25°C)
20 W
Total power dissipation
P
T
(Ta = 25°C)
2.0 W
Junction temperature T
j
150
°C
Storage temperature T
stg
−55 to +150 °C
*PW ≤ 10 ms, duty cycle ≤ 50%
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Base
2. Collector
3. Emitter
