The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
SILICON POWER TRANSISTOR
2SC4346,4346-Z
NPN SILICON TRIPLE DIFFUSED TRANSISTOR
FOR HIGH SPEED SWITCHING, HIGH VOLTAGE SWITCHING
DATA SHEET
Document No. D17082EJ2V0DS00 (2nd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
2004
The mark shows ma
or revised
oints.
ORDERING INFORMATION
PART NUMBER PACKAGE
2SC4346
TO-251 (MP-3)
2SC4346-Z
TO-252 (MP-3Z)
DESCRIPTION
The 2SC4346 is a mold power transistor developed for
high-speed switching, high voltage switching, and is ideal
for use as a driver in devices such as switching regulators,
DC/DC converters, and high-frequency power amplifiers.
FEATURES
• Small package, but can control for high-current
• Low collector saturation voltage
V
CE(sat) = 1.0 V MAX. (IC = 2.0 A)
• Ultra high-speed switching
t
f = 0.3
µ
s MAX. (IC = 2.0 A)
• Base reverse bias safe operating area is wide
V
CEX(SUS)1 = 450 V MIN. (IC = 2.0 A)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to Base Voltage VCBO 500 V
Collector to Emitter Voltage VCEO 400 V
Emitter to Base Voltage V
EBO 8.0 V
Collector Current (DC) IC(DC) 5.0 A
Collector Current (pulse)
I
C(pulse)
Note1
10 A
Base current (DC) I
B(DC) 2.5 A
Total Power Dissipation P
T1 (TC = 25°C) 18 W
Total Power Dissipation P
T2 (TA = 25°C)
1.0
Note2
, 2.0
Note3
W
Junction Temperature Tj 150 °C
Storage Temperature Tstg −55 to +150 °C
Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50%
2. Mounted on print board
3. Mounted on ceramic substrate of 7.5 mm
2
x 0.7 mm
