©
SILICO N POWER TRANSISTORS
2SC4332, 2SC4332-Z
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
Document No. D16430EJ1V0DS00 (1st edition)
Date Published October 2002 NS CP(K)
Printed in Japan
2002
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confirm that this is the latest version.
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availability and additional information.
The 2SC4332 and 2SC4332-Z are mold power transistors
developed for high-speed switching and features a very low
collector-to-emitter saturation voltage.
This transistor is ideal for use in switching regulators, DC/DC
converters, motor drivers, solenoid drivers, and other low-voltage
power supply devices, as well as for high-current switching.
FEATURES
• Low collector saturation voltage
V
CE(sat)
= 0.3 V MAX. (I
C
= 3 A / I
B
= 0.15 A)
• Fast switching speed:
t
f
≤ 0.3
µ
s MAX. (I
C
= 3 A)
• High DC current gain
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
°°
°
C)
Collector to Base Voltage V
CBO
100 V
Collector to Emitter Voltage V
CEO
60 V
Base to Emitter Voltage V
EBO
7.0 V
Collect or Current (DC) I
C(DC)
5.0 A
Collect or Current (pulse) I
C(pulse)
Note1
10 A
Base Current (DC) I
B(DC)
2.5 A
Total Power Dissipation P
T
(T
C
= 25°C) 15 W
Total Power Dissipation P
T
(T
A
= 25°C) 1.0
Note2
, 2.0
Note3
W
Junct i on Temperature T
j
150 °C
Storage Temperature T
stg
−55 to +150 °C
Notes 1. PW ≤ 10 ms, duty cycle ≤ 50%
2. Printing borard mounted
3.
7.5 mm
2
x 0.7 mm, ceramic board mounted
PACKAGE DRAWING (Unit: mm)
Electrode Connection
1. Base
2. Collector
3. Emitter
4. Fin
collector