©
SILICO N POWER TRANSISTORS
2SC4332, 2SC4332-Z
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
Document No. D16430EJ1V0DS00 (1st edition)
Date Published October 2002 NS CP(K)
Printed in Japan
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The 2SC4332 and 2SC4332-Z are mold power transistors
developed for high-speed switching and features a very low
collector-to-emitter saturation voltage.
This transistor is ideal for use in switching regulators, DC/DC
converters, motor drivers, solenoid drivers, and other low-voltage
power supply devices, as well as for high-current switching.
FEATURES
• Low collector saturation voltage
V
CE(sat)
= 0.3 V MAX. (I
C
= 3 A / I
B
= 0.15 A)
• Fast switching speed:
t
f
≤ 0.3
µ
s MAX. (I
C
= 3 A)
• High DC current gain
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
°°
°
C)
Collector to Base Voltage V
CBO
100 V
Collector to Emitter Voltage V
CEO
60 V
Base to Emitter Voltage V
EBO
7.0 V
Collect or Current (DC) I
C(DC)
5.0 A
Collect or Current (pulse) I
C(pulse)
Note1
10 A
Base Current (DC) I
B(DC)
2.5 A
Total Power Dissipation P
T
(T
C
= 25°C) 15 W
Total Power Dissipation P
T
(T
A
= 25°C) 1.0
Note2
, 2.0
Note3
W
Junct i on Temperature T
j
150 °C
Storage Temperature T
stg
−55 to +150 °C
Notes 1. PW ≤ 10 ms, duty cycle ≤ 50%
2. Printing borard mounted
3.
7.5 mm
2
x 0.7 mm, ceramic board mounted
PACKAGE DRAWING (Unit: mm)
Electrode Connection
1. Base
2. Collector
3. Emitter
4. Fin
collector
