©
1996
DATA SHEET
SILICON TRANSISTOR
2SC4225
DESCRIPTION
The 2SC4225 is an NPN silicon epitaxial transistor designed for low
noise amplifier at VHF through UHF band.
It has large dynamic range and good current characteristics.
FEATURES
• Low Noise and High Gain
NF = 1.5 dB TYP. at VCE = 10 V, IC = 5 mA, f = 1 GHz
S21e
2
= 10 dB TYP. at VCE = 10 V, IC = 20 mA, f = 1 GHz
(reference value)
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Collector to Base Voltage VCB0 25 V
Collector to Emitter Voltage V
CE0 12 V
Emitter to Base Voltage V
EB0 3.0 V
Collector Current I
C 70 mA
Total Power Dissipation P
T 160 mW
Junction Temperature T
j 150 ˚C
Storage Temperature T
stg –65 to +150 ˚C
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
Characteristics Symbol MIN. TYP. MAX. Unit Test Conditions
Collector Cutoff Current ICB0 1.0
µ
AVCB = 10 V, IE = 0
Emitter Cutoff Current IEB0 1.0
µ
AVEB = 2 V, IC = 0
DC Current Gain hFE 40 80 200
VCE = 3 V, IC = 20 mA, pulsed
Gain Bandwidth Product fT 4 GHz
VCE = 3 V, IC = 20 mA, f = 1 GHz
Output Capacitance Cob 1.2 1.8 pF VCB = 3 V, IE = 0, f = 1 MHz
Insertion Power Gain S21e
2
7.5 9.0 dB
VCE = 3 V, IC = 20 mA, f = 1 GHz
Noise Figure
NF 1.5 3.0 dB VCE = 3 V, IC = 5 mA, f = 1GHz
hFE Classifications
Rank R2 R3
Marking R2 R3
hFE 40 to 120 100 to 200
Document No. P11192EJ2V0DS00 (2nd edition)
Date Published February 1996 P
Printed in Japan
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
SUPER MINI MOLD
PACKAGE DIMENSIONS
in millimeters
2.1 ± 0.1
1.25 ± 0.1
2
1
3
2.0 ± 0.2
0.3
+0.1
–0
0.65
0.65
0.3
+0.1
–0
0.15
+0.1
–0.05
0 to 0.1
0.3
0.9 ± 0.1
Marking
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
