©
1996
DATA SHEET
SILICON TRANSISTOR
2SC4187
DESCRIPTION
The 2SC4187 is designed primarily for use in low voltage and low
current application up to UHF band. The 2SC4187 is ideal for pagers,
electro-optic detector postamplifier applications, and other battery pow-
ered systems. Super mini mold package makes it suitable for use in small
type equipments such as HICs.
FEATURES
• Low Noise :
NF = 3.0 dB TYP. @V
CE
= 1 V, I
C
= 250
µ
A, f = 1.0 GHz
• High Gain :
|S
21e
|
2
= 6.5 dB TYP. @V
CE
= 1 V, I
C
= 1 mA, f = 1.0 GHz
• Small Package
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Collector to Base Voltage VCBO 15 V
Collector to Emitter Voltage V
CEO 8V
Emitter to Base Voltage V
EBO 2V
Collector Current I
C 5mA
Total Power Dissipation P
T 50 mW
Junction Temperature T
j 150 ˚C
Storage Temperature T
stg –65 to +150 ˚C
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
Characteristic Symbol MIN. TYP. MAX. Unit Test Conditions
Collector Cutoff Current ICBO 0.1
µ
AVCB = 5 V, IE = 0
Emitter Cutoff Current IEBO 0.1
µ
AVEB = 1 V, IC = 0
DC Current Gain hFE 50 100 250 VCE = 1 V, IC = 250
µ
A, pulsed
Gain Bandwidth Product fT 4.0 GHz VCE = 1 V, IC = 1 mA, f = 1 GHz
Feedback Capacitance Cre 0.5 0.7 pF VCB = 1 V, IE = 0, f = 1 MHz
Insertion Power Gain |S21e|
2
4.0 6.5 dB VCE = 1 V, IE = 1 mA, f = 1 GHz
Noise Figure NF 3.0 4.5 dB
V
CE
= 1 V, I
C
= 250
µ
A, f = 1 GHz
hFE Classification
Class R6A R6B R6C
Marking R6A R6B R6C
hFE 50 to 100 80 to 160 125 to 250
PRECAUTION
Avoid high static voltages or electric fields so that this device would not suffer any damage due to those voltages or fields.
PACKAGE DIMENSIONS
in millimeters
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
SUPER MINI MOLD
2.1 ±0.1
1.25 ±0.1
2
1
3
2.0 ±0.2
0.3
+0.1
–0
0.65
0.65
0.3
+0.1
–0
0.15
+0.1
–0.05
0 to 0.1
0.3
0.9 ±0.1
Marking
1. Emitter
2. Base
3. Collector
Document No. P10370EJ3V0DS00 (3rd edition)
Date Published February 1996 P
Printed in Japan