©
1984
DATA SHEET
SILICON TRANSISTOR
2SC4183
RF AMPLIFIER FOR UHF TV TUNER
NPN SILICON EPITAXIAL TRANSISTOR
SUPER MINI MOLD
DESCRIPTION
The 2SC4183 is specifically designed for UHF RF amplifier applica-
tions. The 2SC4183 features high gain, low noise, and excellent forward
AGC characteristics in tiny plastic super mini mold package makes it
suitable for use in small type equipments such as Hybrid Integrated
Circuit and other applications.
FEATURES
• Low NF and high Gpb
NF = 3.0 dB Typ.
Gpb = 10 dB Typ. (f = 900 MHz)
• Foward AGC characteristics.
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Collector to Base Voltage VCB0 30 V
Collector to Emitter Voltage V
CE0 25 V
Emitter to Base Voltage V
EB0 3.0 V
Collector Current I
C 20 mA
Total Power Dissipation P
T 160 mW
Junction Temperature T
j 150 ˚ C
Storage Temperature T
stg –65 to +150 ˚ C
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
Characteristics Symbol MIN. TYP. MAX. Unit Test Conditions
Collector Cutoff Current ICB0 0.1
µ
AVCB = 10 V, IE = 0
DC Current Gain hFE 60 100 240 VCE = 5 V, IC = 2 mA
Gain Bandwidth Product fT 700 1 000 MHz VCE = 5 V, IC = 2 mA
Output Capacitance Cob 0.55 1.0 pF VCB = 5 V, IE = 0
Noise Figure NF 3.0 4.8 dB
VCE = 5 V, IC = 2 mA, f = 900 MHz
Power Gain
Gpb 610 dBVCE = 5 V, IC = 2 mA, f = 900 MHz
Collector Saturation Voltage
VCE(sat) 0.5 V
IC = 10 mA, IB = 1 mA
hFE Classification
Rank U16 U17 U18
Marking U16 U17 U18
hFE 60 to 120 90 to 180 120 to 240
Document No. P11188EJ4V0DS00 (4th edition)
(Previous No. TC-1432A)
Date Published February 1996 P
Printed in Japan
PACKAGE DIMENSIONS
in millimeters
2.1 ± 0.1
1.25 ± 0.1
2
1
3
2.0 ± 0.2
0.3
+0.1
–0
0.65
0.65
0.3
+0.1
–0
0.15
+0.1
–0.05
0 to 0.1
0.3
0.9 ± 0.1
Marking
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
