SILICON TRANSISTOR
2SC4092
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
4 PINS MINI MOLD
DATA SHEET
Document No. P10363EJ1V1DS00 (1st edition)
Date Published March 1997 N
Printed in Japan
1987©
DESCRIPTION
The 2SC4092 is an NPN silicon epitaxial transistor designed for low-
noise amplifier at VHF, UHF band.
It is contained in 4 pins mini-mold package which enables high-isolation
gain.
FEATURES
•NF = 1.5 dB TYP. @f = 1.0 GHz, V
CE
= 10 V, I
C
= 5 mA
•
S
21e
2
= 12 dB TYP. @f = 1.0 GHz, V
CE
= 10 V, I
C
= 20 mA
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C)
Collector to Base Voltage V
CBO
25 V
Collector to Emitter Voltage V
CEO
12 V
Emitter to Base Voltage V
EBO
3.0 V
Collector Current I
C
70 mA
Total Power Dissipation P
T
200 mW
Junction Temperature T
j
150
°
C
Storage Temperature T
stg
−
65 to +150
°
C
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Collector Cutoff Current I
CBO
0.1
µ
A
V
CB
= 15 V, I
E
= 0
Emitter Cutoff Current I
EBO
0.1
µ
A
V
EB
= 2.0 V, I
C
= 0
DC Current Gain h
FE
40 200 V
CE
= 10 V, I
C
= 20 mA
Gain Bandwidth Product f
T
6 GHz V
CE
= 10 V, I
C
= 20 mA f = 1.0 GHz
Output Capacitance C
ob
0.55 0.9 pF V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
Insertion Power Gain
S
21e
2
9.5 12 dB V
CE
= 10 V, I
C
= 20 mA, f = 1.0 GHz
Noise Figure NF 1.5 3.0 dB V
CE
= 10 V, I
C
= 5 mA, f = 1.0 GHz
Maximum Available Gain MAG 14.5 dB V
CE
= 10 V, I
C
= 20 mA, f = 1.0 GHz
h
FE
Classification
Class R4/RD * R5/RE *
Marking R4 R5
h
FE
40 to 120 100 to 200 * Old Specification / New Specification
PACKAGE DIMENSIONS
(Units: mm)
PIN CONNECTIONS
1.
2.
3.
4.
Collector
Emitter
Base
Emitter
5° 5°
5° 5°
0 to 0.1
0.8
2.9±0.2
(1.8)
(1.9)
0.950.85
1.1
+0.2
−0.1
0.16
+0.1
−0.06
0.4
4
1
3
2
+0.1
−0.05
2.8
+0.2
−0.3
1.5
+0.2
−0.1
0.6
+0.1
−0.05
0.4
+0.1
−0.05
0.4
+0.1
−0.05
