Any changing of specification will not be informed individual
2SC4081F
NPN Silicon
General Purpose Transistor
RoHS Compliant Product
· Low Cob. Cob = 2.0 pF (Typ.)
· Complements the 2SA1576A
Dim Min Max
A 1.800 2.200
B 1.150 1.350
C 0.800 1.000
D 0.300 0.400
G 1.200 1.400
H 0.000 0.100
J 0.100 0.250
K 0.350 0.500
L 0.590 0.720
S 2.000 2.400
V 0.280 0.420
All Dimension in mm
SOT-323
K
J
C
H
L
A
B
S
GV
3
1
2
D
Top View
1
2
3
http://www.SeCoSGmbH.com
Elektronische Bauelemente
01-Jun-2002 Rev. A
Page 1 of 3
AbsoluteMaximumRatingsatTa=25к
Parameter Symbol Ratings Unit
Junction Temperature Tj +150
ć
Storage Temperature Tstg -55~+150
ć
CollectortoBaseVoltageVCBO60 V
CollectortoEmitterVoltageVCEO50 V
EmittertoBaseVoltageVEBO7 V
CollectorCurrentIC150 mA
Total Power Dissipation PD 225 m W
Characteristics atTa=25к
Parameter Symbol
Min
Typ.
Max
Unit Test Conditions
Collector-Base Breakdown Voltage BVCBO 60 - - V IC=50uA
Collector-Emitter Breakdown Voltage BVCEO 50 - - V IC=1mA
Emitter-Base Breakdown Voltage BVEBO 7 - - V IE=50uA
Collector-Emitter Breakdown Voltage ICBO - - 100 nA VCB=60V
Emitter-Base Cutoff Current IEBO - - 100 nA VEB=7V
Collector Saturation Voltage 1 VCE(sat) - - 400 mV IC=50mA, IB=5mA
DC Current Gain hFE 120
- 560 - VCE=6V, IC=1mA
Gain-Bandwidth Product fT - 180
- MHz VCE=-12V, IC=2mA, f=100MHz
Output Capacitance Cob - 2 3.5 pF VCB=-12V, f=1MHz, IE=0
Range 120 - 270 180 - 390 270 - 560
*Pulse Test: Pulse Width = 380us, Duty Cycle 2%
Classification of hFE
Rank Q R S
Feature
Marking Code: 5BX
X = hFE Rank Code
