2SC3930
0.03A , 30V
NPN Silicon Epitaxial Planar Transistor
Elektronische Bauelemente
08-Mar-2011 Rev. A Page 1 of 3
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
Top View
A
L
C B
D
G
H J
F
K E
1
2
3
1
2
3
Base
Emitte
Collector
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURE
● For high-frequency Amplification Complementary
to 2SA1532
● Optimum for RF amplification of FM/AM radios
● High transition frequency f
T
CLASSIFICATION OF h
FE
PACKAGE INFORMATION
Package MPQ LeaderSize
SOT-323 3K 7’ inch
ABSOLUTE MAXIMUM RATINGS ( T
A
= 25°C unless otherwise specified)
Parameter Symbol Ratings Unit
Collector to Base Voltage V
CBO
30 V
Collector to Emitter Voltage V
CEO
20 V
Emitter to Base Voltage V
EBO
5 V
Collector Current – Continuous I
C
30 mA
Collector Power Dissipation P
C
150 mW
Junction, Storage Temperature T
J
, T
STG
150, -55~150 ℃
ELECTRICAL CHARACTERISTICS ( T
A
= 25°C unless otherwise specified)
Parameter Symbol Min. Typ. Max. Unit Testing Condition
Collector-base breakdown voltage V
(BR)CBO
30 - - V I
C
=100μA, I
E
=0
Collector-emitter breakdown voltage V
(BR)CEO
20 - - V I
C
=100μA, I
B
=0
Emitter-base breakdown voltage V
(BR)EBO
5 - - V I
E
=100μA, I
C
=0
Collector Cut-off Current I
CBO
- - 0.1 A V
CB
=10V, I
E
=0
Emitter Cut-off Current I
EBO
- - 0.1 A V
EB
=5V, I
C
=0
DC Current Gain h
FE
70 - 220 V
CE
=10V, I
C
=1mA
Transition Frequency f
T
150 - - MHz V
CE
=10V, I
E
=1mA, f=200MHz
Common emitter reverse transfer
capacitance
C
re
- - 1.5 pF V
CB
=10V, I
C
=1mA, f=10.7MHz
Noise Figure NF - - 4 dB V
CB
=10V, I
C
=1mA, f=5MHz
Reverse transfer impedance Z
rb
- - 50 Ω V
CB
=10V, I
C
=1mA, f=2MHz
Product-Rank
2SC3930-VB 2SC3930-VC
Range
70~140 110~220
SOT-323
REF.
Millimete
REF.
Millimete
Min. Max. Min. Max.
A 1.80 2.20 G 0.100 REF.
B 1.80 2.45 H 0.525 REF.
C 1.15 1.35 J 0.08 0.25
D 0.80 1.10 K - -
E 1.20 1.40 L 0.650 TYP.
F 0.20 0.40
