2SC388
0.05A , 30V
NPN Plastic-Encapsulated Transistor
Elektronische Bauelemente
10-Mar-2011 Rev. A Page 1 of 2
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
A
CE
K
F
D
B
G
H
J
Base
Emitte
Collector
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
TV Final picture if amplifier applications
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C unless otherwise specified)
Parameter Symbol Rating Unit
Collector to Base Voltage V
CBO
30 V
Collector to Emitter Voltage V
CEO
25 V
Emitter to Base Voltage V
EBO
4 V
Collector Current - Continuous I
C
50 mA
Collector Power Dissipation P
C
300 mW
Junction, Storage Temperature T
J
, T
STG
150, -55~150 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise specified)
Parameter Symbol Min. Typ. Max. Unit Test Condition
Collector to Base Breakdown Voltage V
(BR)CBO
30 - - V I
C
=10μA, I
E
=0
Collector to Emitter Breakdown Voltage V
(BR)CEO
25 - - V I
C
=5mA, I
B
=0
Emitter to Base Breakdown Voltage V
(BR)EBO
4 - - V I
E
=10μA, I
C
=0
Collector Cut – Off Current I
CBO
- - 0.1 μA V
CB
=30V, I
E
=0
Emitter Cut – Off Current I
EBO
- - 0.1 μA V
EB
=3V, I
C
=0
DC Current Gain h
FE
20 - 200 V
CE
=12.5V, I
C
=12.5mA
Collector to Emitter Saturation Voltage V
CE(sat)
- - 0.2 V I
C
=15mA, I
B
=1.5mA
Base to Emitter Saturation voltage V
BE(sat)
- - 1.2 V I
C
=15mA, I
B
=1.5mA
Transition Frequency f
T
300 - - MHz V
CE
=12.5V, I
C
=12.5mA
Collector Output Capacitance C
ob
0.8 - 2 pF V
CB
=10V, I
E
=0, f=1MHz
Power Gain Gpe 28 - 36 dB
V
CC
=12.5V, I
E
=-12.5mA,
f=45MHz
Emitte
Collector
Base
TO-92
REF.
Millimeter
Min. Max.
A 4.40 4.70
B 4.30 4.70
C 12.70 -
D 3.30 3.81
E 0.36 0.56
F 0.36 0.51
G 1.27 TYP.
H 1.10 -
J 2.42 2.66
K 0.36 0.76
