DATA SHEET
SILICON TRANSISTOR
2SC3663
NPN EPITAXIAL SILICON TRANSISTOR
FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
1997©
Document No. P10406EJ1V0DS00 (1st edition)
Date Published August 1997 N
Printed in Japan
DATA SHEET
FEATURES
• Low-voltage, low-current, low-noise and high-gain
NF = 3.0 dB TYP. @V
CE
= 1 V, I
C
= 250
P
A, f = 1.0 GHz
G
A
= 3.5 dB TYP. @V
CE
= 1 V, I
C
= 250
P
A, f = 1.0 GHz
• Ideal for battery drive of pagers, compact radio equipment,
cordless phones, etc.
• Gold electrode gives high reliability.
• Mini mold package, ideal for hybrid ICs.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 q
qq
qC)
PARAMETER SYMBOL RATING UNIT
Collector to Base Voltage V
CBO
15 V
Collector to Emitter Voltage V
CEO
8V
Emitter to Base Voltage V
EBO
2V
Collector Current I
C
5mA
Total Power Dissipation P
T
50 mW
Junction Temperature T
j
150
q
C
Storage Temperature T
stg
ð
65 to +150
q
C
ELECTRICAL CHARACTERISTICS (T
A
= 25 q
qq
qC)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Collector Cut-off Current I
CBO
V
CB
= 5 V, I
E
= 0 0.1
P
A
Emitter Cut-off Current I
EBO
V
EB
= 1 V, I
C
= 0 0.1
P
A
DC Current Gain h
FE
V
CE
= 1 V, I
C
= 250
P
A, pulse 50 100 250
Gain Bandwidth Product f
T
V
CE
= 1 V, I
C
= 1 mA 4 GHz
Insertion Power Gain
°
S
21e
°
2
V
CE
= 1 V, I
C
= 1 mA, f = 1 GHz 4.0 6.5 dB
Maximum Available Gain MAG V
CE
= 1 V, I
C
= 1 mA, f = 1 GHz 12.5 dB
Noise Figure NF V
CE
= 1 V, I
C
= 250
P
A, f = 1.0 GHz 3.0 4.5 dB
Associated Power Gain G
A
V
CE
= 1 V, I
C
= 250
P
A, f = 1.0 GHz 3.5 dB
Collector Capacitance
C
ob
Note
V
CB
= 1 V, I
E
= 0, f = 1.0 MHz 0.4 0.6 pF
Note
Measured using 3-pin bridge, with emitter pin connected to the bridge guard pin.
PACKAGE DIMENSIONS (in mm)
2.8 ± 0.2
2.9 ± 0.2
0 to 0.1
0.950.3
1.1 to 1.4
0.95
0.4
1.5
C
Marking
E
B
0.65
+0.1
–0.15
+0.1
–0.05
0.16
+0.1
–0.06
0.4
+0.1
–0.05
PIN CONNECTIONS
E: Emitter
B: Base
C: Collector
Marking: R62