©
1996
DATA SHEET
Document No. P11674EJ1V0DS00 (1st edition)
Date Published August 1996 P
Printed in Japan
SILICON TRANSISTOR
2SC3603
The 2SC3603 is an NPN epitaxial transistor designed for low-
noise amplification at 0.5 to 4.0 GHz. This transistor has low-noise
and high-gain characteristics in a wide collector current region, and
has a wide dynamic range.
FEATURES
• Low noise : NF = 2.1 dB TYP. @ f = 2.0 GHz
• High power gain : G
A = 10 dB TYP. @ f = 2.0 GHz
ABSOLUTE MAXIMUM RATINGS (TA = 25
°°
°°
°C)
ELECTRICAL CHARACTERISTICS (TA = 25
°°
°°
°C)
PARAMETER SYMBOL RATING UNIT
Collector to Base Voltage VCBO 20 V
Collector to Emitter Voltage VCEO 12 V
Emitter to Base Voltage VEBO 3V
Collector Current IC 100 mA
Total Power Dissipation PT (TC = 25 °C) 580 mW
Junction Temperature Tj 200 °C
Storage Temperature Tstg
-
65 to +150 °C
NPN EPITAXIAL SILICON TRANSISTOR
FOR MICROWAVE LOW-NOISE AMPLIFICATION
PACKAGE DIMENSIONS (in mm)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 10 V, IE = 0 1.0
µ
A
Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 1.0
µ
A
DC Current Gain hFE VCE = 10 V, IC = 20 mA Pulse 50 120 300
Gain Bandwidth Product fT VCE = 10 V, IC = 20 mA 7 GHz
Reverse Transfer Capacitance Cre VCB = 10 V, IE = 0, f = 1 MHz 0.5 1.0 pF
Noise Figure NF
Note
VCE = 10 V, IC = 7 mA, f = 2 GHz 2.1 3.4 dB
Insertion Gain |S21e|
2
VCE = 10 V, IC = 20 mA, f = 2 GHz 7.0 9.0 dB
Maximum Available Gain MAG VCE = 10 V, IC = 20 mA, f = 2 GHz 10.0 12.0 dB
Power Gain GA VCE = 10 V, IC = 7 mA, f = 2 GHz 10 dB
3.8 MIN.
E
CB
E
45 °
0.5 ± 0.05
0.5 ± 0.05
0.1
+0.06
-0.03
2.55 ± 0.2
2.1
φ
3.8 MIN.
3.8 MIN.
3.8 MIN.
1.8 MAX.
0.55
PIN CONNECTIONS
E: Emitter
C: Collector
B: Base
