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2SC3587

2SC3587首页预览图
型号: 2SC3587
PDF文件:
  • 2SC3587 PDF文件
  • 2SC3587 PDF在线浏览
功能描述: NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
PDF文件大小: 91.01 Kbytes
PDF页数: 共8页
制造商: NEC[NEC]
制造商LOGO: NEC[NEC] LOGO
制造商网址: http://www.nec.com/
捡单宝2SC3587
供应商
型号
品牌
封装
批号
库存数量
备注
询价
  • 深圳市坤融电子有限公司

    16

    0755-2399097517318082080,13510287235肖瑶,树平航都大厦11FG11012384

  • 2SC3587
  • RENESAS/NEC 
  • SMD 
  • 2021+ 
  • 88530 
  • 原装一级代理 

  • 深圳市辉华拓展电子有限公司

    16

    0755-8279089118126117392陈玲玲18126117392深圳市福田区汉国中心55楼11010821

  • 2SC3587
  • NEC 
  • 十字架 
  • 最新批次 
  • 13250 
  • 绝对原装正品 

PDF页面索引
120%
©
1996
DATA SHEET
Document No. P11673EJ1V0DS00 (1st edition)
Date Published August 1996 P
Printed in Japan
SILICON TRANSISTOR
2SC3587
The 2SC3587 is an NPN epitaxial transistor designed for low-
noise amplification at 0.5 to 6.0 GHz. This transistor has low-noise
and high-gain characteristics in a wide collector current region, and
has a wide dynamic range.
FEATURES
Low noise : NF = 1.7 dB TYP. @ f = 2 GHz
NF = 2.6 dB TYP. @ f = 4 GHz
High power gain : GA = 12.5 dB TYP. @ f = 2 GHz
G
A = 8.0 dB TYP. @ f = 4 GHz
ABSOLUTE MAXIMUM RATINGS (TA = 25
°°
°°
°C)
ELECTRICAL CHARACTERISTICS (TA = 25
°°
°°
°C)
NPN EPITAXIAL SILICON TRANSISTOR
FOR MICROWAVE LOW-NOISE AMPLIFICATION
PACKAGE DIMENSIONS (in mm)
3.8 MIN.
E
CB
E
45 °
0.5 ± 0.05
0.5 ± 0.05
0.1
+0.06
-0.03
2.55 ± 0.2
2.1
φ
3.8 MIN.
3.8 MIN.
3.8 MIN.
1.8 MAX.
0.55
PIN CONNECTIONS
E: Emitter
C: Collector
B: Base
PARAMETER SYMBOL RATING UNIT
Collector to Base Voltage VCBO 20 V
Collector to Emitter Voltage VCEO 10 V
Emitter to Base Voltage VEBO 1.5 V
Collector Current IC 35 mA
Total Power Dissipation PT (TC = 25 °C) 580 mW
Junction Temperature Tj 200 °C
Storage Temperature Tstg
-
65 to +150 °C
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 10 V 1.0
µ
A
Emitter Cut-off Current IEBO VEB = 1 V 1.0
µ
A
DC Current Gain hFE VCE = 6 V, IC = 10 mA Pulse 50 100 250
Gain Bandwidth Product fT VCE = 6 V, IC = 10 mA 10.0 GHz
Reverse Transfer Capacitance Cre VCB = 10 V, f = 1 MHz 0.2 0.7 pF
Noise Figure NF
Note
VCE = 6 V, IC = 5 mA f = 2 GHz 1.7 2.4 dB
f = 4 GHz 2.6 dB
Insertion Gain |S21e|
2
VCE = 6 V, IC = 10 mA f = 2 GHz 10.5 12.5 dB
f = 4 GHz 7.5 dB
Maximum Available Gain MAG VCE = 6 V, IC = 10 mA, f = 4 GHz 10 dB
Power Gain GA VCE = 6 V, IC = 5 mA f = 2 GHz 12.5 dB
f = 4 GHz 8.0 dB
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